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  • IPB120N06S403ATMA2

IPB120N06S403ATMA2

MOSFET N-CH 60V 120A TO263-3


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPB120N06S403ATMA2
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 910
  • Description: MOSFET N-CH 60V 120A TO263-3 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.2m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 120μA
Input Capacitance (Ciss) (Max) @ Vds 13150pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Factory Lead Time 16 Weeks
Fall Time (Typ) 15 ns
Mount Surface Mount
Turn-Off Delay Time 80 ns
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 20V
Number of Pins 3
Max Dual Supply Voltage 60V
Weight 1.946308g
Drain-source On Resistance-Max 0.0028Ohm
Transistor Element Material SILICON
Pulsed Drain Current-Max (IDM) 480A
Operating Temperature -55°C~175°C TJ
Height 4.4mm
Packaging Tape & Reel (TR)
Length 10mm
Width 9.25mm
Published 2009
Series Automotive, AEC-Q101, OptiMOS™
JESD-609 Code e3
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 167W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 40 ns
See Relate Datesheet