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  • IPB144N12N3GATMA1

IPB144N12N3GATMA1

Trans MOSFET N-CH 120V 56A Automotive 3-Pin(2+Tab) D2PAK T/R


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPB144N12N3GATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 499
  • Description: Trans MOSFET N-CH 120V 56A Automotive 3-Pin(2+Tab) D2PAK T/R (Kg)

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Shipping Cost

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 107W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 107W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14.4m Ω @ 56A, 10V
Vgs(th) (Max) @ Id 4V @ 61μA
Input Capacitance (Ciss) (Max) @ Vds 3220pF @ 60V
Current - Continuous Drain (Id) @ 25°C 56A Ta
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V
Rise Time 9ns
Drain to Source Voltage (Vdss) 120V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 56A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 224A
Avalanche Energy Rating (Eas) 90 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet