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IPB180N04S401ATMA1

MOSFET N-CH 40V 180A TO263-7-3


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPB180N04S401ATMA1
  • Package: TO-263-7, D2Pak (6 Leads + Tab)
  • Datasheet: PDF
  • Stock: 319
  • Description: MOSFET N-CH 40V 180A TO263-7-3 (Kg)

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FedEx International, 5-7 business days.

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Details

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Parameters
Terminal Form GULL WING
Max Dual Supply Voltage 40V
Drain-source On Resistance-Max 0.0013Ohm
Peak Reflow Temperature (Cel) NOT SPECIFIED
Avalanche Energy Rating (Eas) 550 mJ
Reach Compliance Code not_compliant
RoHS Status ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G6
Lead Free Contains Lead
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 188W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 35 ns
Factory Lead Time 16 Weeks
FET Type N-Channel
Mount Surface Mount
Rds On (Max) @ Id, Vgs 1.3m Ω @ 100A, 10V
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Number of Pins 7
Transistor Element Material SILICON
Vgs(th) (Max) @ Id 4V @ 140μA
Operating Temperature -55°C~175°C TJ
Halogen Free Halogen Free
Packaging Tape & Reel (TR)
Published 2010
Input Capacitance (Ciss) (Max) @ Vds 14000pF @ 25V
Series OptiMOS™
Current - Continuous Drain (Id) @ 25°C 180A Tc
JESD-609 Code e3
Gate Charge (Qg) (Max) @ Vgs 176nC @ 10V
Rise Time 24ns
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) 10V
Number of Terminations 6
Vgs (Max) ±20V
ECCN Code EAR99
Fall Time (Typ) 41 ns
Terminal Finish Tin (Sn)
Additional Feature ULTRA-LOW RESISTANCE
Turn-Off Delay Time 38 ns
Technology MOSFET (Metal Oxide)
Continuous Drain Current (ID) 180A
Terminal Position SINGLE
Gate to Source Voltage (Vgs) 20V
See Relate Datesheet