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  • IPB180P04P4L02ATMA1

IPB180P04P4L02ATMA1

Trans MOSFET P-CH 40V 180A 7-Pin(6+Tab) TO-263


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPB180P04P4L02ATMA1
  • Package: TO-263-7, D2Pak (6 Leads + Tab)
  • Datasheet: PDF
  • Stock: 689
  • Description: Trans MOSFET P-CH 40V 180A 7-Pin(6+Tab) TO-263 (Kg)

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Details

Tags

Parameters
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 150W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 32 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.4m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 2.2V @ 410μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 18700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Gate Charge (Qg) (Max) @ Vgs 286nC @ 10V
Rise Time 28ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Factory Lead Time 14 Weeks
Vgs (Max) ±16V
Fall Time (Typ) 119 ns
Mount Surface Mount
Turn-Off Delay Time 146 ns
Continuous Drain Current (ID) 180A
Mounting Type Surface Mount
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage -40V
Drain-source On Resistance-Max 0.0039Ohm
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Avalanche Energy Rating (Eas) 84 mJ
RoHS Status ROHS3 Compliant
Number of Pins 7
Lead Free Contains Lead
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS™
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
See Relate Datesheet