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  • IPB200N25N3GATMA1

IPB200N25N3GATMA1

IPB200N25N3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPB200N25N3GATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 340
  • Description: IPB200N25N3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 64A, 10V
Vgs(th) (Max) @ Id 4V @ 270μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 7100pF @ 100V
Current - Continuous Drain (Id) @ 25°C 64A Tc
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 64A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 250V
Drain-source On Resistance-Max 0.02Ohm
Pulsed Drain Current-Max (IDM) 256A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet