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IPB45N06S4L08ATMA1
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The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Pulsed Drain Current-Max (IDM) | 180A |
| Avalanche Energy Rating (Eas) | 97 mJ |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| RoHS Status | ROHS3 Compliant |
| Operating Temperature | -55°C~175°C TJ |
| Lead Free | Contains Lead |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| Series | OptiMOS™ |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 71W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 9 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 7.9m Ω @ 45A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 35μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 4780pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 45A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 64nC @ 10V |
| Rise Time | 2ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 8 ns |
| Turn-Off Delay Time | 45 ns |
| Continuous Drain Current (ID) | 45A |
| Gate to Source Voltage (Vgs) | 16V |
| Max Dual Supply Voltage | 60V |
| Mount | Surface Mount |
| Drain-source On Resistance-Max | 0.0079Ohm |
See Relate Datesheet