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  • IPB50R299CPATMA1

IPB50R299CPATMA1

MOSFET N-CH 550V 12A TO-263


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPB50R299CPATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 891
  • Description: MOSFET N-CH 550V 12A TO-263 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series CoolMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 104W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 104W
Case Connection DRAIN
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 299m Ω @ 6.6A, 10V
Vgs(th) (Max) @ Id 3.5V @ 440μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1190pF @ 100V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Rise Time 14ns
Drain to Source Voltage (Vdss) 550V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 500V
Drain-source On Resistance-Max 0.299Ohm
Pulsed Drain Current-Max (IDM) 26A
Avalanche Energy Rating (Eas) 289 mJ
RoHS Status RoHS Compliant
Lead Free Contains Lead
See Relate Datesheet