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  • IPB60R040C7ATMA1

IPB60R040C7ATMA1

MOSFET N-CH 650V 50A TO263-3


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPB60R040C7ATMA1
  • Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
  • Datasheet: PDF
  • Stock: 269
  • Description: MOSFET N-CH 650V 50A TO263-3 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Rds On (Max) @ Id, Vgs 40mOhm @ 24.9A, 10V
Vgs(th) (Max) @ Id 4V @ 1.24mA
Input Capacitance (Ciss) (Max) @ Vds 4340pF @ 400V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 107nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 81 ns
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 34mOhm
Height 4.5mm
RoHS Status ROHS3 Compliant
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
Supplier Device Package PG-TO263-3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series CoolMOS™ C7
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 227W Tc
Power Dissipation 227W
Turn On Delay Time 18.5 ns
FET Type N-Channel
See Relate Datesheet