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IPB60R360P7ATMA1

MOSFET TO263-3


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPB60R360P7ATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 812
  • Description: MOSFET TO263-3 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 555pF @ 400V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.36Ohm
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Pulsed Drain Current-Max (IDM) 26A
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
DS Breakdown Voltage-Min 600V
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Avalanche Energy Rating (Eas) 27 mJ
Packaging Tape & Reel (TR)
Published 2014
RoHS Status ROHS3 Compliant
Series CoolMOS™ P7
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 41W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 360m Ω @ 2.7A, 10V
Vgs(th) (Max) @ Id 4V @ 140μA
See Relate Datesheet