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  • IPB60R380C6ATMA1

IPB60R380C6ATMA1

Trans MOSFET N-CH 600V 10.6A 3-Pin(2+Tab) TO-263


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPB60R380C6ATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 264
  • Description: Trans MOSFET N-CH 600V 10.6A 3-Pin(2+Tab) TO-263 (Kg)

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Details

Tags

Parameters
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 10.6A
Factory Lead Time 18 Weeks
Gate to Source Voltage (Vgs) 20V
Mount Surface Mount
Mounting Type Surface Mount
Max Dual Supply Voltage 600V
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-source On Resistance-Max 0.38Ohm
Pulsed Drain Current-Max (IDM) 30A
RoHS Status ROHS3 Compliant
Transistor Element Material SILICON
Lead Free Contains Lead
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series CoolMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Additional Feature HIGH VOLTAGE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 83W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 83W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 380m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 320μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 100V
Current - Continuous Drain (Id) @ 25°C 10.6A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
See Relate Datesheet