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  • IPB64N25S320ATMA1

IPB64N25S320ATMA1

IPB64N25S320ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPB64N25S320ATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 892
  • Description: IPB64N25S320ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 64A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 250V
Input Capacitance 7nF
Drain to Source Resistance 17.5mOhm
Rds On Max 20 mΩ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package PG-TO263-3-2
Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Published 2012
Series OptiMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 300W Tc
Turn On Delay Time 18 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 20mOhm @ 64A, 10V
Vgs(th) (Max) @ Id 4V @ 270μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 7000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 64A Tc
Gate Charge (Qg) (Max) @ Vgs 89nC @ 10V
Rise Time 20ns
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
See Relate Datesheet