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IPB70N10S3L12ATMA1

Trans MOSFET N-CH 100V 70A 3-Pin(2+Tab) TO-263


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPB70N10S3L12ATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 988
  • Description: Trans MOSFET N-CH 100V 70A 3-Pin(2+Tab) TO-263 (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series OptiMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 125W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 11.8m Ω @ 70A, 10V
Vgs(th) (Max) @ Id 2.4V @ 83μA
Input Capacitance (Ciss) (Max) @ Vds 5550pF @ 25V
Current - Continuous Drain (Id) @ 25°C 70A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 70A
Drain-source On Resistance-Max 0.012Ohm
Pulsed Drain Current-Max (IDM) 280A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 154 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet