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IPB80N04S2H4ATMA2

MOSFET N-CHANNEL_30/40V


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPB80N04S2H4ATMA2
  • Package: TO-263-3
  • Datasheet: PDF
  • Stock: 536
  • Description: MOSFET N-CHANNEL_30/40V (Kg)

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Means of Payment

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RFQ (Request for Quotations)

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Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Factory Lead Time 10 Weeks
Contact Plating Tin
Package / Case TO-263-3
Surface Mount YES
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Max Power Dissipation 300W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 23 ns
Halogen Free Halogen Free
Rise Time 63ns
Drain to Source Voltage (Vdss) 40V
Polarity/Channel Type N-CHANNEL
Fall Time (Typ) 22 ns
Turn-Off Delay Time 46 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Drain to Source Breakdown Voltage 40V
Input Capacitance 4.4nF
Avalanche Energy Rating (Eas) 660 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Rds On Max 3.7 mΩ
RoHS Status ROHS3 Compliant
See Relate Datesheet