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  • IPB80N04S306ATMA1

IPB80N04S306ATMA1

Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) TO-263


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPB80N04S306ATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 935
  • Description: Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) TO-263 (Kg)

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Details

Tags

Parameters
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 100W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.4m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 52μA
Halogen Free Halogen Free
Factory Lead Time 12 Weeks
Input Capacitance (Ciss) (Max) @ Vds 3250pF @ 25V
Mount Surface Mount
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Mounting Type Surface Mount
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Vgs (Max) ±20V
Turn-Off Delay Time 20 ns
Transistor Element Material SILICON
Continuous Drain Current (ID) 80A
Operating Temperature -55°C~175°C TJ
Gate to Source Voltage (Vgs) 20V
Packaging Tape & Reel (TR)
Max Dual Supply Voltage 40V
Published 2007
Drain-source On Resistance-Max 0.0054Ohm
Avalanche Energy Rating (Eas) 125 mJ
RoHS Status ROHS3 Compliant
Series OptiMOS™
Lead Free Contains Lead
JESD-609 Code e3
Part Status Not For New Designs
See Relate Datesheet