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  • IPB80N06S2L09ATMA2

IPB80N06S2L09ATMA2

MOSFET N-CH 55V 80A TO263-3


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPB80N06S2L09ATMA2
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 848
  • Description: MOSFET N-CH 55V 80A TO263-3 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Number of Terminations 2
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 190W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 10 ns
Factory Lead Time 10 Weeks
FET Type N-Channel
Mount Surface Mount
Rds On (Max) @ Id, Vgs 8.2m Ω @ 52A, 10V
Mounting Type Surface Mount
Vgs(th) (Max) @ Id 2V @ 125μA
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds 2620pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Number of Pins 3
Gate Charge (Qg) (Max) @ Vgs 105nC @ 10V
Transistor Element Material SILICON
Rise Time 19ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Operating Temperature -55°C~175°C TJ
Vgs (Max) ±20V
Fall Time (Typ) 18 ns
Packaging Tape & Reel (TR)
Turn-Off Delay Time 53 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Published 2006
Max Dual Supply Voltage 55V
Drain-source On Resistance-Max 0.011Ohm
Radiation Hardening No
Series OptiMOS™
RoHS Status ROHS3 Compliant
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
See Relate Datesheet