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  • IPB80N06S2L11ATMA2

IPB80N06S2L11ATMA2

MOSFET N-CH 55V 80A TO263-3


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPB80N06S2L11ATMA2
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 162
  • Description: MOSFET N-CH 55V 80A TO263-3 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 2075pF @ 25V
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25°C 80A Tc
Number of Pins 3
Transistor Element Material SILICON
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Operating Temperature -55°C~175°C TJ
Rise Time 32ns
Packaging Tape & Reel (TR)
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Published 2010
Vgs (Max) ±20V
Series OptiMOS™
Pbfree Code yes
Fall Time (Typ) 13 ns
Part Status Active
Turn-Off Delay Time 46 ns
Continuous Drain Current (ID) 80A
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Gate to Source Voltage (Vgs) 20V
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Max Dual Supply Voltage 55V
Technology MOSFET (Metal Oxide)
Drain-source On Resistance-Max 0.0147Ohm
Terminal Form GULL WING
Drain to Source Breakdown Voltage 55V
Peak Reflow Temperature (Cel) NOT SPECIFIED
Avalanche Energy Rating (Eas) 280 mJ
Reach Compliance Code not_compliant
Height 4.4mm
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Length 10mm
Width 9.25mm
JESD-30 Code R-PSSO-G2
RoHS Status ROHS3 Compliant
Number of Elements 1
Lead Free Contains Lead
Power Dissipation-Max 158W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 158W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10.7m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 2V @ 93μA
Halogen Free Halogen Free
See Relate Datesheet