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IPB80P03P4L07ATMA1
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| Parameters | |
|---|---|
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 88W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Factory Lead Time | 14 Weeks |
| Case Connection | DRAIN |
| Mount | Surface Mount |
| Turn On Delay Time | 8 ns |
| FET Type | P-Channel |
| Mounting Type | Surface Mount |
| Transistor Application | SWITCHING |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Rds On (Max) @ Id, Vgs | 6.9m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 130μA |
| Number of Pins | 3 |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 5700pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 80A Tc |
| Transistor Element Material | SILICON |
| Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V |
| Rise Time | 4ns |
| Operating Temperature | -55°C~175°C TJ |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | +5V, -16V |
| Fall Time (Typ) | 60 ns |
| Packaging | Tape & Reel (TR) |
| Turn-Off Delay Time | 15 ns |
| Continuous Drain Current (ID) | 80A |
| Gate to Source Voltage (Vgs) | 5V |
| Max Dual Supply Voltage | -30V |
| Drain-source On Resistance-Max | 0.0069Ohm |
| RoHS Status | ROHS3 Compliant |
| Published | 2008 |
| Lead Free | Contains Lead |
| Series | OptiMOS™ |
See Relate Datesheet