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  • IPB80P04P4L06ATMA1

IPB80P04P4L06ATMA1

Trans MOSFET P-CH 40V 80A 3-Pin(2+Tab) TO-263


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPB80P04P4L06ATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 494
  • Description: Trans MOSFET P-CH 40V 80A 3-Pin(2+Tab) TO-263 (Kg)

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Details

Tags

Parameters
Height 4.4mm
Length 10mm
Width 9.25mm
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series Automotive, AEC-Q101, OptiMOS™
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 88W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 88W
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 6.4m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 2.2V @ 150μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 6580pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 104nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 44 ns
Turn-Off Delay Time 61 ns
Continuous Drain Current (ID) -80A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage -40V
Drain-source On Resistance-Max 0.0064Ohm
Drain to Source Breakdown Voltage -40V
See Relate Datesheet