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IPC100N04S5L1R5ATMA1

MOSFET N-CH 40V 100A 8TDSON


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPC100N04S5L1R5ATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 966
  • Description: MOSFET N-CH 40V 100A 8TDSON (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-F3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 115W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.5m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 60μA
Input Capacitance (Ciss) (Max) @ Vds 5340pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Drain Current-Max (Abs) (ID) 100A
Drain-source On Resistance-Max 0.0021Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 220 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet