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  • IPD031N03LGATMA1

IPD031N03LGATMA1

Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) TO-252


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPD031N03LGATMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 323
  • Description: Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) TO-252 (Kg)

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Details

Tags

Parameters
Power Dissipation-Max 94W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 94W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.1m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 5300pF @ 15V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V
Rise Time 6ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 90A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Drain-source On Resistance-Max 0.004Ohm
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Pulsed Drain Current-Max (IDM) 400A
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Avalanche Energy Rating (Eas) 60 mJ
Packaging Tape & Reel (TR)
Radiation Hardening No
Published 2008
Series OptiMOS™
RoHS Status ROHS3 Compliant
JESD-609 Code e3
Lead Free Contains Lead
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
See Relate Datesheet