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  • IPD053N06NATMA1

IPD053N06NATMA1

Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) TO-252 T/R


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPD053N06NATMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 594
  • Description: Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) TO-252 T/R (Kg)

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Details

Tags

Parameters
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.3m Ω @ 45A, 10V
Vgs(th) (Max) @ Id 2.8V @ 36μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 30V
Current - Continuous Drain (Id) @ 25°C 18A Ta 45A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 45A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Avalanche Energy Rating (Eas) 60 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Published 2008
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3W Ta 83W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
See Relate Datesheet