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IPD060N03LGATMA1

N-KANAL POWER MOS


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPD060N03LGATMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 934
  • Description: N-KANAL POWER MOS (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 56W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 56W
Case Connection DRAIN
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 15V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Rise Time 3ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Factory Lead Time 18 Weeks
Turn-Off Delay Time 20 ns
Mount Surface Mount
Continuous Drain Current (ID) 50A
Mounting Type Surface Mount
Gate to Source Voltage (Vgs) 20V
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Max Dual Supply Voltage 30V
Number of Pins 3
Drain-source On Resistance-Max 0.009Ohm
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Drain to Source Breakdown Voltage 30V
Packaging Tape & Reel (TR)
Avalanche Energy Rating (Eas) 60 mJ
Published 2008
Height 2.41mm
Series OptiMOS™
Length 6.73mm
Width 6.22mm
JESD-609 Code e3
RoHS Status ROHS3 Compliant
Pbfree Code no
Lead Free Contains Lead
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
See Relate Datesheet