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IPD30N06S215ATMA2
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| Parameters | |
|---|---|
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 30A |
| Max Dual Supply Voltage | 55V |
| Drain-source On Resistance-Max | 0.0147Ohm |
| Pulsed Drain Current-Max (IDM) | 120A |
| Avalanche Energy Rating (Eas) | 240 mJ |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 10 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| Series | OptiMOS™ |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Reference Standard | AEC-Q101 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 136W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 14.7m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 80μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1485pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 30A Tc |
See Relate Datesheet