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IPD30N06S2L-13

MOSFET N-CH 55V 30A TO252-3


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPD30N06S2L-13
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 555
  • Description: MOSFET N-CH 55V 30A TO252-3 (Kg)

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Details

Tags

Parameters
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 136W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 80μA
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Mounting Type Surface Mount
Drain Current-Max (Abs) (ID) 30A
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-source On Resistance-Max 0.017Ohm
Surface Mount YES
Transistor Element Material SILICON
Pulsed Drain Current-Max (IDM) 200A
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2006
DS Breakdown Voltage-Min 55V
Series OptiMOS™
JESD-609 Code e3
Avalanche Energy Rating (Eas) 240 mJ
Pbfree Code yes
RoHS Status ROHS3 Compliant
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
See Relate Datesheet