Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Frequency | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Current | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Reference Standard | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Max Breakdown Voltage | Supplier Device Package | Power Dissipation-Max | Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | FET Technology | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Transistor Type | Input Capacitance | Transition Frequency | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max | Current - Collector Cutoff (Max) | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic |
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AUIRF4905S | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tube | 1997 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | Other Transistors | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 200W Tc | SWITCHING | 0.02Ohm | 55V | SILICON | P-Channel | 20m Ω @ 42A, 10V | 4V @ 250μA | 3500pF @ 25V | 180nC @ 10V | 42A | 42A Tc | 55V | 280A | 140 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD30N06S2L-13 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2006 | OptiMOS™ | yes | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | LOGIC LEVEL COMPATIBLE | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 136W Tc | SWITCHING | 0.017Ohm | 55V | SILICON | N-Channel | 13m Ω @ 30A, 10V | 2V @ 80μA | 1800pF @ 25V | 69nC @ 10V | 30A | 30A Tc | 55V | 200A | 240 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFH5206TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2007 | HEXFET® | Obsolete | 1 (Unlimited) | 5 | EAR99 | 5.9944mm | RoHS Compliant | Lead Free | No | 8 | 8-PowerVDFN | No SVHC | 838.2μm | 5mm | 6.7MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | 260 | 30 | R-PDSO-N5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.6W | 6.4 ns | 2V | 3.6W Ta 100W Tc | 89A | SWITCHING | 22 ns | SILICON | N-Channel | 6.7m Ω @ 50A, 10V | 4V @ 100μA | 2490pF @ 25V | 60nC @ 10V | 11ns | 8.2 ns | 20V | 60V | 16A Ta 89A Tc | 350A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC847CE6433HTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2011 | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 100mA | 3 | TO-236-3, SC-59, SOT-23-3 | 250MHz | Surface Mount | 150°C TJ | 45V | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | BC847 | Not Qualified | 330mW | 1 | SINGLE | NPN | 330mW | 45V | 100mA | 45V | 600mV | SWITCHING | SILICON | NPN | 250MHz | 15nA ICBO | 50V | 6V | 420 @ 2mA 5V | 600mV @ 5mA, 100mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS138WH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Cut Tape (CT) | 2002 | SIPMOS® | Active | 1 (Unlimited) | 3 | EAR99 | 2mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | SC-70, SOT-323 | 1mm | 1.25mm | Surface Mount | 124.596154mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2A | e3 | DUAL | GULL WING | 1 | 50V | 1 | Halogen Free | Single | 500mW | 2.2 ns | 1V | 60V | 500mW Ta | 280mA | 6.7 ns | SILICON | N-Channel | 3.5 Ω @ 200mA, 10V | 1.4V @ 26μA | 43pF @ 25V | 1.5nC @ 10V | 3ns | 8.2 ns | 20V | 60V | 280mA Ta | 4.2 pF | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS84PWH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Cut Tape (CT) | 2000 | SIPMOS® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 2mm | ROHS3 Compliant | Lead Free | Tin | -150mA | No | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | SC-70, SOT-323 | 1mm | 1.25mm | Surface Mount | -55°C~150°C TJ | -60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 3 | 1 | 1 | Halogen Free | Single | 300mW | 6.7 ns | -60V | 300mW Ta | -150mA | 150°C | 8Ohm | 8.6 ns | SILICON | P-Channel | 8 Ω @ 150mA, 10V | 2V @ 20μA | 19.1pF @ 25V | 1.5nC @ 10V | 16.2ns | 20.5 ns | 20V | -60V | 150mA Ta | 60V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS209PWH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Cut Tape (CT) | 2011 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 2mm | ROHS3 Compliant | Lead Free | -580mA | No | 3 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | SC-70, SOT-323 | 800μm | 1.25mm | Surface Mount | -55°C~150°C TJ | -20V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | 3 | 1 | Halogen Free | Single | 300mW | 26 ns | -20V | 300mW Ta | 580mA | 0.55Ohm | 6 ns | SILICON | P-Channel | 550m Ω @ 630mA, 4.5V | 1.2V @ 3.5μA | 115pF @ 15V | 1.3nC @ 4.5V | 7ns | 4.6 ns | 12V | 630mA Tc | 20V | 45 pF | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS123NH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Cut Tape (CT) | 2012 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 2.9mm | ROHS3 Compliant | Lead Free | No | 3 | LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | 1.1mm | 1.3mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | 1 | 1 | Halogen Free | Single | 500mW | 2.3 ns | 100V | 500mW Ta | 190mA | 150°C | 6Ohm | 7.4 ns | SILICON | N-Channel | 6 Ω @ 190mA, 10V | 1.8V @ 13μA | 20.9pF @ 25V | 0.9nC @ 10V | 3.2ns | 22 ns | 20V | 100V | 190mA Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS84PH6433XTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Cut Tape (CT) | 2002 | SIPMOS® | Active | 1 (Unlimited) | 3 | EAR99 | 2.9mm | ROHS3 Compliant | Tin | No | 3 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | TO-236-3, SC-59, SOT-23-3 | 1.1mm | 1.3mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 1 | Other Transistors | 1 | Single | 360mW | 6.7 ns | 360mW Ta | -170mA | 150°C | SWITCHING | 8Ohm | 8.6 ns | SILICON | P-Channel | 8 Ω @ 170mA, 10V | 2V @ 20μA | 19pF @ 25V | 1.5nC @ 10V | 16.2ns | 20.5 ns | 20V | -60V | 170mA Ta | 60V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS138NH6433XTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | SIPMOS™ | Active | 1 (Unlimited) | 3 | EAR99 | 2.9mm | ROHS3 Compliant | Lead Free | Tin | 3 | LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | 1mm | 1.3mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.21.00.95 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Single | 2.3 ns | 360mW Ta | 230mA | 60V | 6.7 ns | SILICON | N-Channel | 3.5 Ω @ 230mA, 10V | 1.4V @ 26μA | 41pF @ 25V | 1.4nC @ 10V | 3ns | 20V | 230mA Ta | 60V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N7002H6327XTSA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Cut Tape (CT) | 2012 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 2.9mm | ROHS3 Compliant | Lead Free | 115mA | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | 1.1mm | 1.3mm | Surface Mount | -55°C~150°C TJ | 60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | 1 | Not Qualified | 1 | Halogen Free | Single | 200mW | 3 ns | 2.1V | 60V | 500mW Ta | 300mA | 150°C | SWITCHING | 3Ohm | 5.5 ns | SILICON | N-Channel | 3 Ω @ 500mA, 10V | 2.5V @ 250μA | 20pF @ 25V | 0.6nC @ 10V | 3.3ns | 20V | 60V | 300mA Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLMS2002TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Active | 1 (Unlimited) | 6 | EAR99 | 2.9972mm | ROHS3 Compliant | Lead Free | Tin | 6.5A | No | 3 | ULTRA-LOW RESISTANCE | SOT-23-6 | No SVHC | 1.143mm | 1.75mm | 300mOhm | Surface Mount | -55°C~150°C TJ | 20V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | R-PDSO-G6 | 1 | Single | 2W | 8.5 ns | 1.2V | 2W Ta | 6.5A | SWITCHING | 36 ns | SILICON | N-Channel | 30m Ω @ 6.5A, 4.5V | 1.2V @ 250μA | 1310pF @ 15V | 22nC @ 5V | 11ns | 16 ns | 12V | 20V | 1.2 V | 6.5A Ta | 20A | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS159NH6906XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | SIPMOS® | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | TO-236-3, SC-59, SOT-23-3 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 8541.21.00.95 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | 360mW Ta | 230mA | 60V | SILICON | N-Channel | 3.5 Ω @ 160mA, 10V | 2.4V @ 26μA | 44pF @ 25V | 2.9nC @ 5V | 2.9ns | 20V | Depletion Mode | 230mA Ta | 60V | 5.9 pF | 0V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFL014NTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 4 | EAR99 | 6.6802mm | ROHS3 Compliant | Lead Free | 1.9A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-261-4, TO-261AA | No SVHC | 1.4478mm | 3.7mm | 160mOhm | Surface Mount | -55°C~150°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | R-PDSO-G4 | FET General Purpose Power | 1 | DRAIN | Single | 2.1W | 6.6 ns | 4V | 1W Ta | 61 ns | 1.9A | SWITCHING | 12 ns | SILICON | N-Channel | 160m Ω @ 1.9A, 10V | 4V @ 250μA | 190pF @ 25V | 11nC @ 10V | 7.1ns | 3.3 ns | 20V | 55V | 4 V | 2.7A | 1.9A Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC0925NDATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | ENHANCEMENT MODE | e3 | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F6 | 2.5W | 2 | DRAIN SOURCE | Halogen Free | 2.5W | 4.7 ns | 15A | SWITCHING | 0.007Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 17 ns | SILICON | 2 N Channel (Dual Buck Chopper) | 5m Ω @ 20A, 10V | 2V @ 250μA | 1157pF @ 15V | 17nC @ 10V | 3.8ns | 3 ns | 20V | Standard | 11A | 30V | 160A | 14 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPG20N06S2L50ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | OptiMOS™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerVDFN | Surface Mount | -55°C~175°C TJ | ENHANCEMENT MODE | FLAT | NOT SPECIFIED | NOT SPECIFIED | *PG20N06 | R-PDSO-F | 51W | 51W | AEC-Q101 | 2 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | Halogen Free | 2 ns | 55V | 20A | 0.05Ohm | METAL-OXIDE SEMICONDUCTOR | 15 ns | SILICON | 2 N-Channel (Dual) | 50m Ω @ 15A, 10V | 2V @ 19μA | 560pF @ 25V | 17nC @ 10V | 3ns | 10 ns | 20V | Logic Level Gate | 60 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSP88H6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | SIPMOS® | Active | 1 (Unlimited) | 150°C | -55°C | 6.5mm | ROHS3 Compliant | Lead Free | Tin | 4 | TO-261-4, TO-261AA | 1.6mm | 3.5mm | Surface Mount | 250.212891mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Halogen Free | 1.8W | 3.6 ns | 240V | 6Ohm | PG-SOT223-4 | 1.8W Ta | 350mA | 17.9 ns | N-Channel | 6Ohm @ 350mA, 10V | 1.4V @ 108μA | 95pF @ 25V | 6.8nC @ 10V | 3.5ns | 18.9 ns | 20V | 240V | 350mA Ta | 240V | 76pF | 2.8V 10V | ±20V | 600 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFZ44VZSPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tube | 2003 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 57A | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.572mm | 9.65mm | 12mOhm | Surface Mount | -55°C~175°C TJ | 60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 92W | 14 ns | 4V | 92W Tc | 57A | SWITCHING | 35 ns | SILICON | N-Channel | 12m Ω @ 34A, 10V | 4V @ 250μA | 1690pF @ 25V | 65nC @ 10V | 62ns | 38 ns | 20V | 60V | 60V | 4 V | 57A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFS7434TRL7PP | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | No | 7 | TO-263-7, D2Pak (6 Leads + Tab) | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | Single | 245W | 23 ns | 245W Tc | 240A | 107 ns | N-Channel | 1m Ω @ 100A, 10V | 3.9V @ 250μA | 10250pF @ 25V | 315nC @ 10V | 125ns | 85 ns | 20V | 240A Tc | 40V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFS3006TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.826mm | 9.65mm | 2.5MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 375W | 16 ns | 375W Tc | 195A | SWITCHING | 118 ns | SILICON | N-Channel | 2.5m Ω @ 170A, 10V | 4V @ 250μA | 8970pF @ 50V | 300nC @ 10V | 182ns | 189 ns | 20V | 60V | 270A | 195A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AUIRFR5305 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tube | 2006 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | 65MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | Other Transistors | 1 | TO-252AA | DRAIN | Single | 110W | 14 ns | -2V | 110W Tc | 31A | SWITCHING | 39 ns | SILICON | P-Channel | 65m Ω @ 16A, 10V | 4V @ 250μA | 1200pF @ 25V | 63nC @ 10V | 66ns | 63 ns | 20V | -55V | 31A Tc | 55V | 280 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7769L2TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Not For New Designs | 1 (Unlimited) | 9 | EAR99 | 9.144mm | ROHS3 Compliant | No | 11 | DirectFET™ Isometric L8 | No SVHC | 676μm | 7.112mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | TIN SILVER COPPER | BOTTOM | 260 | 30 | R-XBCC-N9 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.3W | 44 ns | 3.3W Ta 125W Tc | 112 ns | 20A | 175°C | SWITCHING | 0.0035Ohm | 92 ns | SILICON | N-Channel | 3.5m Ω @ 74A, 10V | 4V @ 250μA | 11560pF @ 25V | 300nC @ 10V | 32ns | 41 ns | 20V | 100V | 2.7 V | 395A | 375A Tc | 500A | 260 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFI4321PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2006 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.6172mm | ROHS3 Compliant | Lead Free | 34A | No | 3 | TO-220-3 Full Pack | No SVHC | 9.8mm | 4.826mm | Through Hole | -55°C~150°C TJ | 150V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN OVER NICKEL | 260 | 40 | FET General Purpose Power | 1 | TO-220AB | Single | 46W | 18 ns | 5V | 46W Tc | 34A | SWITCHING | 27 ns | SILICON | N-Channel | 16m Ω @ 20A, 10V | 5V @ 250μA | 4440pF @ 50V | 110nC @ 10V | 29ns | 20 ns | 30V | 150V | 34A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB90R340C3ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Surface Mount | Cut Tape (CT) | 2012 | CoolMOS™ | no | Not For New Designs | 1 (Unlimited) | 2 | ROHS3 Compliant | Contains Lead | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 208W | 70 ns | 900V | 208W Tc | 15A | SWITCHING | 0.34Ohm | 400 ns | SILICON | N-Channel | 340m Ω @ 9.2A, 10V | 3.5V @ 1mA | 2400pF @ 100V | 94nC @ 10V | 20ns | 25 ns | 20V | 15A Tc | 34A | 678 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP045N10N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | 3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 214W | 27 ns | 100V | 214W Tc | 100A | SWITCHING | 0.0045Ohm | 48 ns | SILICON | N-Channel | 4.5m Ω @ 100A, 10V | 3.5V @ 150μA | 8410pF @ 50V | 117nC @ 10V | 59ns | 14 ns | 20V | 100A Tc | 400A | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP65R190CFDXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | Tin | 3 | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 151W | 12 ns | 650V | 151W Tc | 17.5A | SWITCHING | 53.2 ns | SILICON | N-Channel | 190m Ω @ 7.3A, 10V | 4.5V @ 730μA | 1850pF @ 100V | 68nC @ 10V | 8.4ns | 6.4 ns | 20V | 17.5A Tc | 57.2A | 484 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP120P04P4L03AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2011 | Automotive, AEC-Q101, OptiMOS™ | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | LOGIC LEVEL COMPATIBLE | TO-220-3 | not_compliant | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 21 ns | -40V | 136W Tc | 120A | 0.0052Ohm | 85 ns | SILICON | P-Channel | 3.4m Ω @ 100A, 10V | 2.2V @ 340μA | 15000pF @ 25V | 234nC @ 10V | 16ns | 57 ns | 16V | 120A Tc | 40V | 480A | 78 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPW65R190CFDFKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2008 | CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | 151W Tc | SWITCHING | 0.19Ohm | 650V | SILICON | N-Channel | 190m Ω @ 7.3A, 10V | 4.5V @ 730μA | 1850pF @ 100V | 68nC @ 10V | 17.5A | 17.5A Tc | 650V | 57.2A | 484 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD90N04S405ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | Automotive, AEC-Q101, OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 9 ns | 40V | 65W Tc | 86A | 0.0052Ohm | 7 ns | SILICON | N-Channel | 5.2m Ω @ 86A, 10V | 4V @ 30μA | 2960pF @ 25V | 37nC @ 10V | 11ns | 10 ns | 20V | 86A Tc | 77 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD079N06L3GBTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | LOGIC LEVEL COMPATIBLE | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | Not Halogen Free | 79W | 15 ns | 60V | 79W Tc | 50A | SWITCHING | 0.0079Ohm | 37 ns | SILICON | N-Channel | 7.9m Ω @ 50A, 10V | 2.2V @ 34μA | 4900pF @ 30V | 29nC @ 4.5V | 26ns | 7 ns | 20V | 50A Tc | 200A | 4.5V 10V | ±20V |
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