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  • IPD320N20N3GATMA1

IPD320N20N3GATMA1

Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) TO-252


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPD320N20N3GATMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 356
  • Description: Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) TO-252 (Kg)

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Details

Tags

Parameters
Technology MOSFET (Metal Oxide)
Lead Free Contains Lead
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 136W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 32m Ω @ 34A, 10V
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id 4V @ 90μA
Number of Pins 3
Halogen Free Halogen Free
Transistor Element Material SILICON
Input Capacitance (Ciss) (Max) @ Vds 2350pF @ 100V
Operating Temperature -55°C~175°C TJ
Current - Continuous Drain (Id) @ 25°C 34A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS™
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JESD-609 Code e3
Continuous Drain Current (ID) 34A
Part Status Active
JEDEC-95 Code TO-252AA
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Max Dual Supply Voltage 200V
ECCN Code EAR99
Avalanche Energy Rating (Eas) 190 mJ
RoHS Status ROHS3 Compliant
Terminal Finish Tin (Sn)
See Relate Datesheet