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  • IPD50N03S2L06ATMA1

IPD50N03S2L06ATMA1

Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-252


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPD50N03S2L06ATMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 507
  • Description: Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-252 (Kg)

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Details

Tags

Parameters
Rds On (Max) @ Id, Vgs 6.4m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 85μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 25V
Factory Lead Time 10 Weeks
Current - Continuous Drain (Id) @ 25°C 50A Tc
Mount Surface Mount
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Rise Time 30ns
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Packaging Tape & Reel (TR)
Published 2006
Fall Time (Typ) 15 ns
Turn-Off Delay Time 40 ns
Series Automotive, AEC-Q101, OptiMOS™
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 20V
JESD-609 Code e3
Max Dual Supply Voltage 30V
Part Status Active
Drain-source On Resistance-Max 0.0092Ohm
Pulsed Drain Current-Max (IDM) 200A
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Avalanche Energy Rating (Eas) 250 mJ
Number of Terminations 2
RoHS Status ROHS3 Compliant
ECCN Code EAR99
Lead Free Contains Lead
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 136W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
See Relate Datesheet