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  • IPD50N06S4L08ATMA2

IPD50N06S4L08ATMA2

MOSFET N-CH 60V 50A TO252-3


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPD50N06S4L08ATMA2
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 367
  • Description: MOSFET N-CH 60V 50A TO252-3 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 60V
Input Capacitance 4.78nF
Rds On Max 7.8 mΩ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package PG-TO252-3-11
Weight 3.949996g
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 1999
Series Automotive, AEC-Q101, OptiMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 71W Tc
Turn On Delay Time 9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.2V @ 35μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4780pF @ 25V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Rise Time 2ns
Drain to Source Voltage (Vdss) 60V
See Relate Datesheet