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  • IPD50R1K4CEAUMA1

IPD50R1K4CEAUMA1

On a Reel of 2500, N-Channel MOSFET, 3.1 A, 550 V, 3-Pin DPAK Infineon IPD50R1K4CEBTMA1


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPD50R1K4CEAUMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 204
  • Description: On a Reel of 2500, N-Channel MOSFET, 3.1 A, 550 V, 3-Pin DPAK Infineon IPD50R1K4CEBTMA1 (Kg)

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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series CoolMOS™ CE
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Reach Compliance Code not_compliant
Number of Elements 1
Power Dissipation-Max 42W Tc
Element Configuration Single
Power Dissipation 25W
Turn On Delay Time 6.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.4 Ω @ 900mA, 13V
Vgs(th) (Max) @ Id 3.5V @ 70μA
Input Capacitance (Ciss) (Max) @ Vds 178pF @ 100V
Current - Continuous Drain (Id) @ 25°C 3.1A Tc
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Rise Time 6ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 13V
Vgs (Max) ±20V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 3.1A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 550V
Height 2.41mm
Length 6.73mm
Width 6.22mm
RoHS Status ROHS3 Compliant
See Relate Datesheet