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  • IPD50R380CEBTMA1

IPD50R380CEBTMA1

MOSFET N CH 500V 9.9A PG-TO252


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPD50R380CEBTMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 159
  • Description: MOSFET N CH 500V 9.9A PG-TO252 (Kg)

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Details

Tags

Parameters
Rds On (Max) @ Id, Vgs 380m Ω @ 3.2A, 13V
Vgs(th) (Max) @ Id 3.5V @ 260μA
Input Capacitance (Ciss) (Max) @ Vds 584pF @ 100V
Current - Continuous Drain (Id) @ 25°C 9.9A Tc
Gate Charge (Qg) (Max) @ Vgs 24.8nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 13V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 14.1A
Drain-source On Resistance-Max 0.38Ohm
Pulsed Drain Current-Max (IDM) 32.4A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 173 mJ
FET Feature Super Junction
RoHS Status ROHS3 Compliant
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2014
Series CoolMOS™
Pbfree Code no
Part Status Discontinued
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 73W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
See Relate Datesheet