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IPD50R500CEBTMA1

MOSFET N-CH 500V 7.6A PG-TO252


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPD50R500CEBTMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 624
  • Description: MOSFET N-CH 500V 7.6A PG-TO252 (Kg)

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Details

Tags

Parameters
Factory Lead Time 6 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2013
Series CoolMOS™
Pbfree Code no
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 57W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 500m Ω @ 2.3A, 13V
Vgs(th) (Max) @ Id 3.5V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 433pF @ 100V
Current - Continuous Drain (Id) @ 25°C 7.6A Tc
Gate Charge (Qg) (Max) @ Vgs 18.7nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 13V
Vgs (Max) ±20V
JEDEC-95 Code TO-252AA
Drain-source On Resistance-Max 0.5Ohm
Pulsed Drain Current-Max (IDM) 24A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 129 mJ
FET Feature Super Junction
RoHS Status ROHS3 Compliant
See Relate Datesheet