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IPD530N15N3GATMA1

Trans MOSFET N-CH 150V 21A 3-Pin(2+Tab) TO-252


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPD530N15N3GATMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 735
  • Description: Trans MOSFET N-CH 150V 21A 3-Pin(2+Tab) TO-252 (Kg)

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Details

Tags

Parameters
Vgs(th) (Max) @ Id 4V @ 35μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 887pF @ 75V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Factory Lead Time 18 Weeks
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Mount Surface Mount
Drive Voltage (Max Rds On,Min Rds On) 8V 10V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Continuous Drain Current (ID) 21A
Transistor Element Material SILICON
Max Dual Supply Voltage 150V
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Pulsed Drain Current-Max (IDM) 84A
Published 2008
Avalanche Energy Rating (Eas) 60 mJ
Series OptiMOS™
Part Status Active
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Lead Free Contains Lead
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 68W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 53m Ω @ 18A, 10V
See Relate Datesheet