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  • IPD60R1K0CEATMA1

IPD60R1K0CEATMA1

N-Channel 600 V 4.3 A 1000 mO 13 nC CoolMOS CE Power Transistor - DPAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPD60R1K0CEATMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 185
  • Description: N-Channel 600 V 4.3 A 1000 mO 13 nC CoolMOS CE Power Transistor - DPAK (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 3.949996g
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series CoolMOS™ CE
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 37W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 130μA
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 100V
Current - Continuous Drain (Id) @ 25°C 4.3A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Rise Time 8ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 4.3A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 1Ohm
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 46 mJ
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet