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  • IPD60R2K1CEAUMA1

IPD60R2K1CEAUMA1

MOSFET N-CH 600V 2.3A TO-252-3


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPD60R2K1CEAUMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 363
  • Description: MOSFET N-CH 600V 2.3A TO-252-3 (Kg)

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Details

Tags

Parameters
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 38W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.1 Ω @ 760mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 60μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 100V
Current - Continuous Drain (Id) @ 25°C 2.3A Tc
Gate Charge (Qg) (Max) @ Vgs 6.7nC @ 10V
Factory Lead Time 18 Weeks
Drive Voltage (Max Rds On,Min Rds On) 10V
Mount Surface Mount
Vgs (Max) ±20V
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Continuous Drain Current (ID) 2.3A
Transistor Element Material SILICON
Max Dual Supply Voltage 600V
Operating Temperature -40°C~150°C TJ
Pulsed Drain Current-Max (IDM) 6A
Packaging Tape & Reel (TR)
Avalanche Energy Rating (Eas) 11 mJ
Published 2008
Series CoolMOS™ CE
JESD-609 Code e3
Pbfree Code yes
RoHS Status ROHS3 Compliant
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
Lead Free Contains Lead
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
See Relate Datesheet