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  • IPD60R380P6ATMA1

IPD60R380P6ATMA1

IPD60R380P6ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPD60R380P6ATMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 541
  • Description: IPD60R380P6ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Weight 3.949996g
Rds On Max 380 mΩ
Operating Temperature -55°C~150°C TJ
RoHS Status ROHS3 Compliant
Packaging Tape & Reel (TR)
Published 2008
Series CoolMOS™ P6
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 83W Tc
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 380mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 4.5V @ 320μA
Input Capacitance (Ciss) (Max) @ Vds 877pF @ 100V
Current - Continuous Drain (Id) @ 25°C 10.6A Tc
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Rise Time 6ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 10.6A
Factory Lead Time 18 Weeks
Gate to Source Voltage (Vgs) 20V
Mount Surface Mount
Max Dual Supply Voltage 600V
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Drain to Source Breakdown Voltage 600V
Number of Pins 3
Input Capacitance 877pF
Supplier Device Package PG-TO252-3
Drain to Source Resistance 342mOhm
See Relate Datesheet