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IPD60R400CEAUMA1

INFINEON - IPD60R400CEAUMA1 - MOSFET Transistor, N Channel, 14.7 A, 600 V, 0.34 ohm, 10 V, 3 V


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPD60R400CEAUMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 357
  • Description: INFINEON - IPD60R400CEAUMA1 - MOSFET Transistor, N Channel, 14.7 A, 600 V, 0.34 ohm, 10 V, 3 V (Kg)

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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series CoolMOS™ CE
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 112W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 400m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 300μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 100V
Current - Continuous Drain (Id) @ 25°C 14.7A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 0.4Ohm
Pulsed Drain Current-Max (IDM) 30A
Avalanche Energy Rating (Eas) 210 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet