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  • IPD60R450E6ATMA1

IPD60R450E6ATMA1

MOSFET N-CH 650V 9.2A


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPD60R450E6ATMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 497
  • Description: MOSFET N-CH 650V 9.2A (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Fall Time (Typ) 10 ns
Mount Surface Mount
Turn-Off Delay Time 70 ns
Mounting Type Surface Mount
Continuous Drain Current (ID) 9.2A
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Number of Pins 3
Weight 3.949996g
Drain-source On Resistance-Max 0.45Ohm
Transistor Element Material SILICON
Drain to Source Breakdown Voltage 600V
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Pulsed Drain Current-Max (IDM) 26A
Published 2015
Radiation Hardening No
Series CoolMOS™ E6
RoHS Status RoHS Compliant
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 74W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 450m Ω @ 3.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 280μA
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 100V
Current - Continuous Drain (Id) @ 25°C 9.2A Tc
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Rise Time 9ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
See Relate Datesheet