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IPD60R950C6

IPD60R950C6 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPD60R950C6
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 503
  • Description: IPD60R950C6 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Operating Temperature -55°C~150°C TJ
RoHS Status ROHS3 Compliant
Packaging Cut Tape (CT)
Published 2008
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 37W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 950m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 130μA
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 100V
Current - Continuous Drain (Id) @ 25°C 4.4A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 4.4A
Drain-source On Resistance-Max 0.95Ohm
Pulsed Drain Current-Max (IDM) 12A
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
DS Breakdown Voltage-Min 600V
Surface Mount YES
Transistor Element Material SILICON
Avalanche Energy Rating (Eas) 46 mJ
See Relate Datesheet