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IPD65R250E6XTMA1

Trans MOSFET N-CH 700V 16.1A 3-Pin(2+Tab) TO-252


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPD65R250E6XTMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 639
  • Description: Trans MOSFET N-CH 700V 16.1A 3-Pin(2+Tab) TO-252 (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series CoolMOS™ E6
JESD-609 Code e3
Pbfree Code yes
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 208W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 208W
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 250m Ω @ 4.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 400μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 1000V
Current - Continuous Drain (Id) @ 25°C 16.1A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Rise Time 9ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 76 ns
Continuous Drain Current (ID) 16.1A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Drain-source On Resistance-Max 0.25Ohm
Drain to Source Breakdown Voltage 700V
Pulsed Drain Current-Max (IDM) 46A
Avalanche Energy Rating (Eas) 290 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet