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  • IPD65R950C6ATMA1

IPD65R950C6ATMA1

Transistor: N-MOSFET; unipolar; 650V; 4.5A; 37W; PG-TO252-3


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPD65R950C6ATMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 358
  • Description: Transistor: N-MOSFET; unipolar; 650V; 4.5A; 37W; PG-TO252-3 (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 3.949996g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series CoolMOS™ C6
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 37W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 37W
Turn On Delay Time 6.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 950m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 200μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 328pF @ 100V
Current - Continuous Drain (Id) @ 25°C 4.5A Tc
Gate Charge (Qg) (Max) @ Vgs 15.3nC @ 10V
Rise Time 5.2ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 13.6 ns
Turn-Off Delay Time 41 ns
Continuous Drain Current (ID) 4.5A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Drain-source On Resistance-Max 0.95Ohm
Drain to Source Breakdown Voltage 650V
Avalanche Energy Rating (Eas) 50 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
See Relate Datesheet