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IPD78CN10NGATMA1

Trans MOSFET N-CH 100V 13A 3-Pin(2+Tab) TO-252


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPD78CN10NGATMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 593
  • Description: Trans MOSFET N-CH 100V 13A 3-Pin(2+Tab) TO-252 (Kg)

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Details

Tags

Parameters
Published 2008
Series OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 31W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 31W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 78m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 12μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 716pF @ 50V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Rise Time 4ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 3 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 13A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain-source On Resistance-Max 0.078Ohm
Pulsed Drain Current-Max (IDM) 52A
Avalanche Energy Rating (Eas) 17 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
See Relate Datesheet