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IPD800N06NGBTMA1

Trans MOSFET N-CH 60V 16A 3-Pin(2+Tab) TO-252


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPD800N06NGBTMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 307
  • Description: Trans MOSFET N-CH 60V 16A 3-Pin(2+Tab) TO-252 (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series OptiMOS™
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 47W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 47W
Case Connection DRAIN
Turn On Delay Time 7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 16μA
Input Capacitance (Ciss) (Max) @ Vds 370pF @ 30V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Rise Time 38ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 27 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 16A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.08Ohm
Pulsed Drain Current-Max (IDM) 64A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 43 mJ
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet