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IPD80P03P4L07ATMA1

MOSFET P-CH 30V 80A TO252-3


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPD80P03P4L07ATMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 360
  • Description: MOSFET P-CH 30V 80A TO252-3 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS™
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 88W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 88W
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.8m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 130μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 5700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Rise Time 4ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) +5V, -16V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 5V
Max Dual Supply Voltage -30V
Drain-source On Resistance-Max 0.0068Ohm
Pulsed Drain Current-Max (IDM) 320A
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet