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  • IPD80R1K4CEATMA1

IPD80R1K4CEATMA1

Transistor: N-MOSFET; unipolar; 800V; 2.3A; 63W; PG-TO252-3


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPD80R1K4CEATMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 181
  • Description: Transistor: N-MOSFET; unipolar; 800V; 2.3A; 63W; PG-TO252-3 (Kg)

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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package PG-TO252-3
Weight 3.949996g
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series CoolMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 63W Tc
Element Configuration Single
Power Dissipation 63W
Turn On Delay Time 25 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2.3A, 10V
Vgs(th) (Max) @ Id 3.9V @ 240μA
Input Capacitance (Ciss) (Max) @ Vds 570pF @ 100V
Current - Continuous Drain (Id) @ 25°C 3.9A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) 3.9A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 800V
Input Capacitance 570pF
Drain to Source Resistance 1.4Ohm
Rds On Max 1.4 Ω
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet