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IPD80R900P7ATMA1

Single N-Channel 800 V 900 mOhm 15 nC CoolMOS? Power Mosfet - DPAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPD80R900P7ATMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 154
  • Description: Single N-Channel 800 V 900 mOhm 15 nC CoolMOS? Power Mosfet - DPAK (Kg)

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Details

Tags

Parameters
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series CoolMOS™ P7
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn) - with Nickel (Ni) barrier
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 45W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 900m Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 110μA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 500V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-252AA
Drain-source On Resistance-Max 0.9Ohm
Pulsed Drain Current-Max (IDM) 14A
DS Breakdown Voltage-Min 800V
Avalanche Energy Rating (Eas) 13 mJ
RoHS Status ROHS3 Compliant
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
See Relate Datesheet