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IPD90N06S4L06ATMA2

MOSFET N-CH 60V 90A TO252-3


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPD90N06S4L06ATMA2
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 743
  • Description: MOSFET N-CH 60V 90A TO252-3 (Kg)

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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 3.949996g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101, OptiMOS™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Additional Feature ULTRA-LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 79W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.3m Ω @ 90A, 10V
Vgs(th) (Max) @ Id 2.2V @ 40μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 5680pF @ 25V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Rise Time 3ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 90A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 60V
Avalanche Energy Rating (Eas) 67 mJ
Height 2.41mm
Length 6.73mm
Width 6.22mm
RoHS Status ROHS3 Compliant
See Relate Datesheet