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  • IPD90R1K2C3ATMA1

IPD90R1K2C3ATMA1

IPD90R1K2C3ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPD90R1K2C3ATMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 367
  • Description: IPD90R1K2C3ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package PG-TO252-3
Weight 3.949996g
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series CoolMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 83W Tc
Element Configuration Single
Power Dissipation 83W
Turn On Delay Time 70 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 310μA
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 100V
Current - Continuous Drain (Id) @ 25°C 5.1A Tc
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Rise Time 20ns
Drain to Source Voltage (Vdss) 900V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 400 ns
Continuous Drain Current (ID) 5.1A
Gate to Source Voltage (Vgs) 30V
Max Dual Supply Voltage 900V
Input Capacitance 710pF
Drain to Source Resistance 1.2Ohm
Rds On Max 1.2 Ω
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet