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IPDD60R050G7XTMA1

MOSFET NCH 650V 135A PG-HDSOP-10


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPDD60R050G7XTMA1
  • Package: 10-PowerSOP Module
  • Datasheet: PDF
  • Stock: 626
  • Description: MOSFET NCH 650V 135A PG-HDSOP-10 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Number of Channels 1
Power Dissipation-Max 278W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 278W
Turn On Delay Time 22 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 15.9A, 10V
Vgs(th) (Max) @ Id 4V @ 800μA
Input Capacitance (Ciss) (Max) @ Vds 2670pF @ 400V
Current - Continuous Drain (Id) @ 25°C 47A Tc
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) 47A
JEDEC-95 Code TO-252
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.05Ohm
Drain to Source Breakdown Voltage 600V
Max Junction Temperature (Tj) 150°C
Height 2.5mm
RoHS Status ROHS3 Compliant
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case 10-PowerSOP Module
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series CoolMOS™ G7
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 10
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
See Relate Datesheet