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  • IPI037N08N3GXKSA1

IPI037N08N3GXKSA1

IPI037N08N3GXKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPI037N08N3GXKSA1
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Datasheet: PDF
  • Stock: 283
  • Description: IPI037N08N3GXKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Series OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 214W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 23 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.75m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 155μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 8110pF @ 40V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 117nC @ 10V
Rise Time 79ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 80V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 510 mJ
Height 9.45mm
Length 10.36mm
Width 4.52mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet