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IPI22N03S4L15AKSA1
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The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2007 |
| Series | OptiMOS™ |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | ULTRA LOW RESISTANCE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSIP-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 31W Tc |
| Operating Mode | ENHANCEMENT MODE |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 14.9m Ω @ 22A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 10μA |
| Input Capacitance (Ciss) (Max) @ Vds | 980pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 22A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±16V |
| Drain Current-Max (Abs) (ID) | 22A |
| Drain-source On Resistance-Max | 0.0149Ohm |
| Pulsed Drain Current-Max (IDM) | 88A |
| DS Breakdown Voltage-Min | 30V |
| Avalanche Energy Rating (Eas) | 20 mJ |
| RoHS Status | RoHS Compliant |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
See Relate Datesheet